vs-20ets..pbf, vs-20ats..pbf www.vishay.com vishay semiconductors revision: 18-aug-11 1 document number: 94341 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high voltage input rectifier diode, 20 a features ? designed and qualified according to jedec-jesd47 ? compliant to rohs directive 2002/95/ec applications ? typical applications are in input rectification and these products are designed to be used with vishay hpp switches and output rectifiers which are available in identical package outlines description the vs-20ets..pbf, vs-20ats..pbf rectifier high voltage series has been optimized for very low forward voltage drop, with moderate leakage. the glass passivation technology used has reliable operation up to 150 c junction temperature. product summary package to-220ac, to-220ab i f(av) 20 a v r 800 v to 1200 v v f at i f 1.1 v i fsm 300 a t j max. 150 c diode variation single die, common anode to-220ac to-220ab 1 2 3 cathode to ba s e anode anode v s -20et s ..p b fv s -20at s ..p b f 2 13 anode cathode ba s e cathode output current in typical applications applications single-phase bridge three-phase bridge units capacitive in put filter t a = 55 c, t j = 125 c common heatsink of 1 c/w 16.3 21 a major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 20 a v rrm 800/1200 v i fsm 300 a v f 10 a, t j = 25 c 1.0 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-20ETS08PBF, vs-20ats08pbf 800 900 1 vs-20ets12pbf, vs-20ats12pbf 1200 1300
vs-20ets..pbf, vs-20ats..pbf www.vishay.com vishay semiconductors revision: 18-aug-11 2 document number: 94341 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 105 c, 180 conduction half sine wave 20 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 250 10 ms sine pulse, no voltage reapplied 300 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 316 a 2 s 10 ms sine pulse, no voltage reapplied 442 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 4420 a 2 ? s electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 20 a, t j = 25 c 1.1 v forward slope resistance r t t j = 150 c 10.4 m ? threshold voltage v f(to) 0.85 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 1.0 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 1.3 c/w typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2 g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ac 20ets08 20ets12 case style to-220ab 20ats08 20ats12
vs-20ets..pbf, vs-20ats..pbf www.vishay.com vishay semiconductors revision: 18-aug-11 3 document number: 94341 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non- repetitive surge current fig. 6 - maximum non- repetitive surge current 90 150 140 130 120 110 100 maximum allowable case temperature (c) average forward current (a) 8 6 2 4 10 12 20 22 14 16 1 8 0 30 60 90 120 1 8 0 r thjc (dc) = 1.3 c/ w cond u ction angle ? 90 150 140 130 120 110 100 maximum allowable case temperature (c) average forward current (a) 10 51520 25 30 35 0 dc 30 60 90 120 1 8 0 r thjc (dc) = 1.3 c/ w ? cond u ction period 5 0 30 25 20 15 10 maxiumum average forward power loss (w) average forward current (a) 8 412 24 16 20 0 rms limit 1 8 0 120 90 60 30 t j = 150 c cond u ction angle ? 0 5 10 15 20 25 30 35 maxiumum average forward power loss (w) average forward current (a) 10 51520 25 0 dc 1 8 0 120 90 60 30 rms limit t j = 150 c ? cond u ction period 50 300 250 200 150 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulse (n) 10 100 1 at any rated load condition and w ith rated v rrm applied follo w ing s u rge. initial t j = 150 c at 60 hz 0.00 8 3 s at 50 hz 0.0100 s 50 150 200 250 100 300 peak half sine wave forward current (a) pulse train duration (s) 1 0.01 0.1 maxim u m non-repetiti v e s u rge c u rrent v ers u s p u lse train d u ration. initial t j = 150 c no v oltage reapplied rated v rrm reapplied
vs-20ets..pbf, vs-20ats..pbf www.vishay.com vishay semiconductors revision: 18-aug-11 4 document number: 94341 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 1 10 100 1000 instantaneous forward current (a) instantaneous forward voltage (v) 1.0 0.5 1.5 2.0 4.0 2.5 3.0 3.5 0 t j = 25 c t j = 150 c 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) steady state v al u e (dc operation) single p u lse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.0 8
vs-20ets..pbf, vs-20ats..pbf www.vishay.com vishay semiconductors revision: 18-aug-11 5 document number: 94341 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table 2 - current rating (20 = 20 a) 4 - package: t = to-220 s = standard recovery rectifier 5 - type of silicon: 6 - voltage code x 100 = v rrm 7 - pbf = lead (pb)-free 08 = 800 v 12 = 1200 v 3 - circuit configuration: e = to-220ac a = to-220ab device code 6 2 4 3 5 7 20 e t s 12 pbf vs- 1 - vishay semiconductors product 1 links to related documents dimensions www.vishay.com/doc?95180 part marking information www.vishay.com/doc?95181
document number: 95180 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 25-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ab, to-220ac outline dimensions vishay semiconductors dimensions for to-220ab in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d and e do not include mold flash. mold flash sh all not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outermost extremes of the plastic body (4) dimension b1 and c1 a pply to base metal only (5) controlling dimensions: inches symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 d2 12.19 12.88 0.480 0.507 a1 1.14 1.40 0.045 0.055 e 10.11 10.51 0.398 0.414 3 a2 2.56 2.92 0.101 0.115 e1 8.38 8.89 0.330 0.350 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.96 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 b3 1.15 1.73 0.045 0.068 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 c2 0.31 1.14 0.012 0.045 q 2.60 3.00 0.102 0.118 d 14.85 15.25 0.585 0.600 3 ? 90 to 93 90 to 93 d1 8.38 9.02 0.330 0.355 3 2 4 1 d d cc d q d1 e a ? p (3) detail b l1 (2) l c e1 2 x e 0.015 a bc mm b s eating plane h1 a a a a1 a2 c s heet 2 view a - a h1 e d2 thermal pad e1 detail b 3 x b2 3 x b d l1 d 123 c c b, b2 c1 b1, b3 s ection c - c and d - d c lead assignments hexfet 1. - gate 2. - drain 3. - s ource igbt s , copak 1. - gate 2. - collector 3. - emitter diode s 1. - anode/open 2. - cathode 3. - anode
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 95180 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 25-oct-10 outline dimensions vishay semiconductors to-220ab, to-220ac dimensions for to-220ac in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d and e do not in clude mold flash. mold flash shal l not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outermost extremes of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimensions: inches (6) thermal pad contour optional within dimensions e, h1, d2 and e1 (7) outline conforms are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 8.38 8.89 0.330 0.350 6 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.96 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.15 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.188 d2 12.19 12.88 0.480 0.507 6 ? 90 to 93 90 to 93 3 d d cc 2 1 detail b detail b view a - a d l1 d 123 c c 2 x b2 2 x b e1 (6) b, b2 ba s e metal c1 (4) d2 (6) h1 thermal pad e b1, b3 s ection c - c and d - d plating (4) c b a a a1 a a2 c s eating plane (6) h1 c l1 (2) a q d1 d l3 l4 ? p (6) e e1 0.015 a b mm l
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
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